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3D numerical noise modeling and simulation of a MISFET photodetector in the nanometer region

K. BALASUBADRA1, V. RAJAMANI2,* , K. SANKARANARAYANAN3

Affiliation

  1. K.L.N.College of Information Techn., Sivagangai, TN, India - 630 611
  2. PSNA College of Engg. and Tech., Dindigul, TN, India - 624 622
  3. V.L.B. Janakiammal Engg. College, Coimbatore, TN, India - 641 042

Abstract

A 3D numerical noise model has been developed for computation of different noises in metal-insulator-semiconductor field effect transistor (MISFET) in the nano meter region. Two port small signal noise equivalent model has been developed to study the overall noise performance. Shot noise, thermal noise and diffusion noise components have also been calculated for the two port MISFET photodetector. Signal-to-noise ratios (SNR), BER and Noise Equivalent Power (NEP) have also been calculated. The operating frequency can be adjusted suitably to make the noise behavior of the MISFET independent of the value of the incident optical power.

Keywords

3D Noise modeling, Two port small signal noise model, MISFET photodetector, Signal-to-noise ratio (SNR), Noise equivalent power (NEP), Bit error rate (BER).

Citation

K. BALASUBADRA, V. RAJAMANI, K. SANKARANARAYANAN, 3D numerical noise modeling and simulation of a MISFET photodetector in the nanometer region, Optoelectronics and Advanced Materials - Rapid Communications, 2, 10, October 2008, pp.603-613 (2008).

Submitted at: Jan. 24, 2008

Accepted at: Oct. 2, 2008