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MINAKSHI DEB BARMA1, SUMITA DEB1,* , ARDHENDU SAHA1
A comparative study in terms of peak efficiency and 3 dB bandwidth is made on four different double tapered configurations of isotropic semiconductor material using total internal reflection quasi phase matching based second harmonic generation with due consideration to the optical losses (surface roughness, Goos–Hänchen shift and absorption loss). When the destructive interference effect due to the nonlinear law of reflection has been incorporated, heavy drop has been observed in the peak efficiency with GaAs and ZnSe as the slab material, which can be compensated by the introduction of fractional scenario on replacing the material by ZnTe. Finally the temperature tuning of the centre wavelength corresponding to peak second harmonic conversion efficiency has also been suggested..
Double tapered configuration, Total internal reflection quasi phase matching, Broadband, Second harmonic generation, Isotropic semiconductor, Nonlinear law of reflection, Temperature tuning.
MINAKSHI DEB BARMA, SUMITA DEB, ARDHENDU SAHA, A comparative analysis of total internal reflection based quasi phase matched broadband second harmonic generation in various configurations of double tapered isotropic semiconductor slab, Optoelectronics and Advanced Materials - Rapid Communications, 10, 9-10, September-October 2016, pp.624-633 (2016).
Submitted at: Sept. 23, 2015
Accepted at: Sept. 29, 2016
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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