Abstract
Thin film solar cell based on copper-indium-gallium-diselenide Cu(In,Ga)Se2 contain a thin cadmium sulfide (CdS) buffer layer. For environmental and industrial reasons, its replacement by a Cd-free material deposited under vacuum is among the challenges of the research community. In this work, we replaced the CdS buffer layer by the oxysulfure of zinc (Zn(O,S)) which has a higher band gap and thus allows greater blue photon collection to achieve higher photon current. In this work we used a simulation code we replace the CdS with Zn (O, S) for different thickness of each layer. We have shown that the solar cell based on CIGS / Zn (O, S) / ZnO can obtain an equivalent efficiency of the solar cell based on CIGS / CdS / ZnO for all thicknesses are studying the absorbent layer and the layer window..
Keywords
Simulation, SCAPS 1-D, CdS, CIGS, Performance.
Citation
A. CHADEL, B. BENYOUCEF, M. CHADEL, A comparative study of CIGS solar cells based on Zn (O, S) buffer layers and CIGS solar cells based on CdS buffer layers, Optoelectronics and Advanced Materials - Rapid Communications, 9, 5-6, May-June 2015, pp.653-656 (2015).
Submitted at: March 21, 2015
Accepted at: May 7, 2015