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XIAOLEI SU1,* , WANCHENG ZHOU2, JIE XU1, JUNBO WANG1, XINHAI HE1, CHONG FU1
Aluminum-doped silicon carbide powders were synthesized via solid state reaction of Si/C system at 1600 in Ar atmosphere, using aluminum powder as the dopant, which were investigated by X-ray diffraction (XRD) and scanning electronic microscope (SEM). The electric permittivities of the prepared powders were determined in the frequency range of 8.2–12.4 GHz. The dielectric real part ε′ and imaginary part ε″ of undoped powder have minimum values (ε′ = 5.5–5.3, ε″ =0.23–0.20), and increase with increasing aluminum content. The mechanism of dielectric loss by doping has been discussed..
Silicon carbide, Dielectric property, Solid state reaction.
XIAOLEI SU, WANCHENG ZHOU, JIE XU, JUNBO WANG, XINHAI HE, CHONG FU, A simple method to improve dielectric property of SiC powder, Optoelectronics and Advanced Materials - Rapid Communications, 5, 12, December 2011, pp.1292-1295 (2011).
Submitted at: Nov. 11, 2011
Accepted at: Nov. 24, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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