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STANKO M. OSTOJIĆ1,* , RAJKO M. ŠAŠIĆ1
A simple model of surrounding gate short-channel nanowire MOSFET current-voltage characteristic has been proposed. This model belongs to the class of drift-diffusion ones; it has been inspired by the corresponding long-channel models and should be considered as their naturally constructed extension. The accuracy of the developed model has been verified by comparison with available simulation results as well as with previous models calculations..
Surrounding Gate, Nanowire MOSFET, Short-Channel, 2D Analysis.
STANKO M. OSTOJIĆ, RAJKO M. ŠAŠIĆ, A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET, Optoelectronics and Advanced Materials - Rapid Communications, 10, 1-2, January-February 2016, pp.50-54 (2016).
Submitted at: Oct. 29, 2015
Accepted at: Feb. 10, 2016
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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