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A unified configuration-coordinate model of structural metastability in amorphous chalcogenide semiconductors

V. O. BALITSKA1,2, O. I. SHPOTYUK1,3,*

Affiliation

  1. Institute of Materials, Scientific Research Company “Carat”, 202, Stryjska str., Lviv, 79031,Ukraine
  2. Lviv State University of Vital Function Safety, 35, Kleparivska str., Lviv, 79023, Ukraine
  3. Institute of Physics, Jan Dlugosz University, 13/15, Al. Armii Krajowej, Czestochowa, 42201, Poland

Abstract

The unified configuration-coordinate model, describing externally-induced structural transformations in amorphous chalcogenide semiconductors, was developed. Within this model, the structural units of glass-forming matrix are supposed to be in one of the next three states: ground (the most thermodynamically equilibrium state), excited (the transient state) and structurally-modified (the metastable state) ones, interconnected with a system of vertical radiative (non-radiative) and thermally-activated over-barrier tunnelling transitions.

Keywords

Amorphous chalcogenide semiconductors, Configuration-coordinate model, Metastability, Relaxation.

Citation

V. O. BALITSKA, O. I. SHPOTYUK, A unified configuration-coordinate model of structural metastability in amorphous chalcogenide semiconductors, Optoelectronics and Advanced Materials - Rapid Communications, 3, 5, May 2009, pp.431-434 (2009).

Submitted at: March 18, 2009

Accepted at: May 25, 2009