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An efficient and flat-gain Erbium-doped fiber amplifier in the region of 1550 nm to 1590 nm

S. W. HARUN1,* , M. C. PAUL2, M. PAL2, A. DHAR2, R. SEN2, S. DAS2, S. K.BHADRA2, N. S. SHAHABUDDIN2, H. AHMAD3

Affiliation

  1. Department of Electrical Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia
  2. Fibre Optics Division, Central Glass and Ceramic Research Institute, 196, Raja S.C. Mullick Road, Kolkata 700 032, India
  3. Photonics Research Center, University of Malaya, 50603 Kuala Lumpur, Malaysia

Abstract

A flat gain erbium-doped fiber amplifier (EDFA) operating in the 1550 nm to 1590 nm region is demonstrated. The EDFA uses only a15m EDF as opposed to a standard L-band EDFA which requires significantly longer EDF lengths. The EDF is fabricated using a Modified Chemical Vapor Deposition process in conjunction with a solution doping technique. The NA, cut-off wavelength and erbium ion concentration of the fiber are obtained at 0.15, 998 nm and 900 ppm respectively. The gain of the EDFA is flattened to a level of about 12 dB with a gain variation of less than 3 dB over a range from 1550 to 1590 nm with a 1480nm pump at 90mW. This amplifier operates on the energy transfer of the quasi-two-level system, whereby the C-band energy acts as a pump for the population inversion required for gain at the longer wavelength. The noise figure at the flat gain region varies from 6 to 8.5 dB.

Keywords

Erbium-doped fiber amplifier, Flat-gain EDFA, L-band EDFA, High concentration EDF.

Citation

S. W. HARUN, M. C. PAUL, M. PAL, A. DHAR, R. SEN, S. DAS, S. K.BHADRA, N. S. SHAHABUDDIN, H. AHMAD, An efficient and flat-gain Erbium-doped fiber amplifier in the region of 1550 nm to 1590 nm, Optoelectronics and Advanced Materials - Rapid Communications, 2, 8, August 2008, pp.455-458 (2008).

Submitted at: June 25, 2008

Accepted at: July 16, 2008