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D. K. VELJKOVIC1,2,*
In this paper the vertical stacks of semiconductor quantum dots (QDs) without dislocations, incorporated in the other semiconductor substrate, for the epitaxial growth in the crystal direction (001) were considered. Analytical expressions for the strain in the both semiconductors were derived for the case when the thicknesses of QDs and the substrate spacers are small enough in comparision with the stack lateral dimensions. In the particular case when the stack consists of InAs QDs in the GaAs substrate, the obtained results were calculated and shown graphically..
Quantum dot stacks, Strain, Analytical evaluation.
D. K. VELJKOVIC, Analytical evaluation of strain inside vertical quantum dot stacks, Optoelectronics and Advanced Materials - Rapid Communications, 10, 7-8, July-August 2016, pp.565-568 (2016).
Submitted at: March 10, 2016
Accepted at: Aug. 3, 2016
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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