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A. L. STEPANOV1,2,* , A. M. ROGOV2, V. F. VALEEV2, V. I. NUZHDIN2, D. A. KONOVALOV2
Fabrication of nanoporous Ge layers by implantation of monocrystalline c-Ge substrate with 115In+ ions for an antireflection optical coating was studied. Ion implantation of Ge wafers was carried out at energy E = 30 keV, current density J = 5 A/cm2 and doses D = 1.8⋅1015 - 7.2⋅1016 ion/cm2. The surface morphology of the implanted samples was studied by scanning electron microscopy and the antireflection properties were analyzed by optical reflection spectroscopy. It is shown that the nanoporous In:PGe layers with spongy structures, consisting of intertwining Ge nanowires formed at highest values of D = 1.9-7.2⋅1016 ion/cm2 is characterized by very low reflectivity (~5%) in a wide optical spectral range of 200-1050 nm.
Ion implantation, Nanoporous germanium, Antireflection optical coatings.
A. L. STEPANOV, A. M. ROGOV, V. F. VALEEV, V. I. NUZHDIN, D. A. KONOVALOV, Antireflection optical coatings formed by implantation of Ge with In+ ions, Optoelectronics and Advanced Materials - Rapid Communications, 19, 9-10, September-October 2025, pp.468-471 (2025).
Submitted at: Jan. 17, 2025
Accepted at: Oct. 10, 2025
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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