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Application of the level set method in three-dimensional simulations of the etching profile evolution for producing nano-scale devices

B. RADJENOVIĆ1, M. RADMILOVIĆ–RADJENOVIĆ1,*

Affiliation

  1. Institute of Physics Belgrade, PO Box 68, 11080 Zemun, Serbia

Abstract

Refined control of etched profiles represents one of the most important tasks of manufacturing process. This paper contains the results of the three dimensional (3D) modeling and simulation of the profile evolution during plasma etching as well as anisotropic wet etching of silicon based on the level set method. In the case of isotropic and anisotropic plasma etching, the type of the etch process is defined by the velocity function. For the anisotropic wet etching, however, etching rate function is determined from the silicon symmetry properties, by means of the interpolation technique using experimentally obtained values of the principal [100], [110], [111], and high index [311] directions in KOH solutions. Presented results confirm that the level set method can be used as an effective tool for etching process modeling.

Keywords

Plasma etching, Wet etching, Level set method, Simulation.

Citation

B. RADJENOVIĆ, M. RADMILOVIĆ–RADJENOVIĆ, Application of the level set method in three-dimensional simulations of the etching profile evolution for producing nano-scale devices, Optoelectronics and Advanced Materials - Rapid Communications, 4, 8, August 2010, pp.1193-1195 (2010).

Submitted at: May 18, 2010

Accepted at: Aug. 12, 2010