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Arc plasma tailoring for the synthesis of compact Tungsten films

M. BADULESCU1, I. GRUIA2,* , C. SURDU-BOB1, C. IACOB1

Affiliation

  1. National Institute for Laser, Plasma and Radiation Physics, Romania
  2. Faculty of Physics, University of Bucharest, Romania

Abstract

In this paper, a study for the correlation of electrical parameters of the Thermo ionic Vacuum Arc (TVA) ignited in Tungsten vapours with ion energy distributions is presented. The plasma source used in this study is a PVD technique used for thin film deposition that works under high vacuum (10-6torr), high voltage (500÷2500 V) and currents of 1÷3 A. This plasma source is confined into a small volume, it does not fill the vacuum chamber. The samples to be deposited are placed a few tens of centimetres away from the core of the plasma. The main assets of the source are reflected in the properties of the films that can be deposited: high compactness, adherence, smoothness and purity. Moreover, the fact that thin films of refractory metals can also be deposited, makes TVA a promising deposition tool for industry, including the high temperature applications. In order to come closer to applications and technological control, the type, density and energy of the impinging particles at the substrate need to be analyzed. An in-house, computer-controlled RFA analyzer was used for determination of ion energy distributions at 35 cm away from the TVA plasma ignited in Tungsten vapours. Compositional and topographical analyses of the tungsten films were also undertaken. EDX analyses have shown high purity of the W films. Two Tungsten oxides, WO2 and WO3 were found by XPS. No macro particles are formed during deposition, as observed in the SEM images.

Keywords

TVA plasma, Arc plasma, W, WO2, WO3 films.

Citation

M. BADULESCU, I. GRUIA, C. SURDU-BOB, C. IACOB, Arc plasma tailoring for the synthesis of compact Tungsten films, Optoelectronics and Advanced Materials - Rapid Communications, 3, 11, November 2009, pp.1231-1234 (2009).

Submitted at: Oct. 19, 2009

Accepted at: Oct. 29, 2009