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Band gap studies on Cu-doped borate-based semiconducting glassy thin films

G. KILIC1,*

Affiliation

  1. Eskisehir Osmangazi University, Science and Art Faculty, Physics Department, 26480, Eskisehir, Turkey

Abstract

In this paper, optical properties of B2O3.Na2O.MgO.V2O5(:Cu) semiconducting glassy thin films (GTFs) were reported. The glassy thin films are produced with argon gas plasma under vacuum with RF sputtering technique. Obtained glassy thin films were observed to have amorphous structure as a result of XRD analysis. The fundamental absorption edge for the present glasses has been analyzed using the theory proposed by Davis and Mott. It has been observed that the fundamental absorption edge and cut-off wavelength shift towards red with the increase in V2O5 content.

Keywords

Vanadium, Borate, Glass, Thin film, Semiconductors.

Citation

G. KILIC, Band gap studies on Cu-doped borate-based semiconducting glassy thin films, Optoelectronics and Advanced Materials - Rapid Communications, 4, 8, August 2010, pp.1111-1113 (2010).

Submitted at: July 22, 2010

Accepted at: Aug. 12, 2010