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MEHMET ALİ KOÇMEN1, TOLGA ÖNCÜ2,*
The effects of interfacial insulator layer on the electrical characteristics of Al/p-Si diodes have been investigated using the current–voltage (I–V) characteristics at room temperature. The values of ideality factor (n), barrier height ( b ) and series resistance Rs have been determined from ln(I)-V plots, Cheung functions and the modified Norde functions. Electrical properties obtained from I–V characteristics of the device with interfacial insulator layer have been compared with the ones obtained from I–V characteristics of the device without interfacial insulator layer. The calculated ideality factor and barrier height are 1.49 and 0.595 eV for Al/p-Si diode, and 1.94 and 0.517 eV for Al/SiO2/p-Si diode, respectively, and it is observed that the ideality factor (n) increases and barrier height ( b ) decreases with interfacial insulator layer. The series resistance values obtained from Cheung functions of the diode with and without the interfacial insulator layer are Rs= 71 and Rs= 112 , respectively. Current–voltage characteristics and the power-law dependence was determined to be governed by space charge-limited currents (SCLC)..
Current-voltage, Metal-semicoductor, Barrier height, Ideality factor, Series resistance, Interfacial insulator layer.
MEHMET ALİ KOÇMEN, TOLGA ÖNCÜ, Calculation of the electrical parameters of aluminium/p type silicon diodes with and without the interfacial insulator layer using thermionic emission theory, Optoelectronics and Advanced Materials - Rapid Communications, 7, 5-6, May-June 2013, pp.448-451 (2013).
Submitted at: Jan. 31, 2013
Accepted at: June 12, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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