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L. G. WANG1, Q. F. ZHANG1, M. L. LIU1,* , Z. H. LIU1, L. ZHANG1
In this paper, we formulate a charge-carrier mobility model for disordered organic semiconductors based on both the Arrhenius and non-Arrhenius temperature dependence. This model can correctly reproduce the effects of temperature, electric field, and carrier concentration on the carrier mobility, and can rather well fit the numerical solution of the master equation at both the low carrier density and high carrier density, the latter of which cannot be well described using the extended Gaussian disorder model (EGDM). Furthermore, experimental current-voltage characteristics in devices based on organic semiconductors are also excellently reproduced by using this mobility model. These results further suggest that a temperature dependence of mobility given by the non-Arrhenius relation is suitable for the low carrier density and small energetic disorder limitation, and the high carrier density and large energetic disorder limitation gives the Arrhenius relation.
Charge transport, Mobility model, Temperature dependence, Disordered organic semiconductors.
L. G. WANG, Q. F. ZHANG, M. L. LIU, Z. H. LIU, L. ZHANG, Carrier mobility model for organic semiconductors based on both Arrhenius and non-Arrhenius temperature dependence, Optoelectronics and Advanced Materials - Rapid Communications, 20, 1-2, January-February 2026, pp.74-79 (2026).
Submitted at: July 8, 2025
Accepted at: Feb. 2, 2026
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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