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LV HONGFENG1, YAN WEIPING1,* , LI JIECHAO1, XIAO LIANGPING1
Silicon oxide film was deposited on glass substrates by electron beam evaporation. Different conditions for the preparation of the SiO2 film were studied. Micro morphology, thickness and compositions of SiO2 film were investigated by AFM, surface profiler and XRD. Metal insulator met al structures have been used to measure the electrical properties of the film. Experiment result shows that the surface of SiO2 film became smooth and uniform for the growth temperature at 300 ℃, the breakdown voltage was higher than 200V for the thickness of the film at 4μm. This SiO 2 film meets the requirements as the insulation film for the low voltage driven Capillary electrophoresis chip..
SiO2 film, Insulating film, Electrical properties, Microfluidic chip.
LV HONGFENG, YAN WEIPING, LI JIECHAO, XIAO LIANGPING, Characteristics of silicon oxide film for low voltage driven CE chip, Optoelectronics and Advanced Materials - Rapid Communications, 6, 9-10, September-October 2012, pp.850-854 (2012).
Submitted at: May 19, 2012
Accepted at: Sept. 20, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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