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S. KAUSHIK1,* , S. PANDEY1, R. SINGHAL2
The industry is looking at resistive memory devices, notably those based on solution-processable, chemically changeable organic materials that are low-cost. In this paper, we have fabricated Resistive Memory devices by spin coating a Ruthenium (II) thin layer which is organic in nature on an ITO substrate. The fabricated Resistive Memory devices, utilizing a Ruthenium (II) thin layer deposited on an ITO substrate via spin coating, exhibit low resistance and high resistance conduction states. These properties make them highly suitable for Resistive Random-Access Memory (RRAM) applications. RRAM has emerged as a promising non-volatile memory technology due to its high scalability, fast switching speed, and low power consumption. By utilizing the low and high resistance states, the Resistive Memory devices can effectively store binary data, offering potential applications in various memory-based systems, including solid-state drives, embedded systems, and Internet of Things (IoT) devices. The use of organic Ruthenium (II) thin layers presents a novel avenue for exploring the performance and stability of Resistive Memory devices, paving the way for further advancements in RRAM technology." Scanning electron microscope (SEM), X-ray diffraction (XRD), and Energy-dispersive X-ray spectroscopy (EDX) were used to characterise the device. Current-Voltage characteristics of these devices were also obtained Low resistance and high resistance conduction states were measured and found perfect for Resistive random-access memory applications. Furthermore, we observe that with the increase in the thickness of the organic layer, the switching improves, and as a result, the resistance ratio improves by the ratio of 10.
Ruthenium, Switching, Devices, Electrical properties.
S. KAUSHIK, S. PANDEY, R. SINGHAL, Characterization and analysis of thin film of Ruthenium complex (II) for Resistive Memory applications, Optoelectronics and Advanced Materials - Rapid Communications, 17, 7-8, July-August 2023, pp.344-347 (2023).
Submitted at: Dec. 19, 2022
Accepted at: Aug. 7, 2023
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
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