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G. A. M. AMIN1,*
Thermally evaporated amorphous Ge0.1As0.3Se0.6 thin films were deposited on glass substrates afterwards an aluminum film of 100 nm thickness was deposited on top of the amorphous film. Optical absorption spectra of Ge0.1As0.3Se0.6 and Al-Ge0.1As0.3Se0.6 films were investigated at room temperature for as-deposited and light irradiated samples. Changes in optical parameters due to deposition of the Al thin layer as well as the effect of light irradiation time were explored. Absorption coefficient decreased after deposition of Al layer and then starts to increase with exposure time to light. In the photodiffusion process, two stages of metal diffusion could be distinguished. Optical energy gap generally decrease with deposition of Al thin layer and time exposure. A theoretical approach combining both photodiffusion kinetics and glass network approach was utilized to explain the photodiffusion process..
Chalcogenides, photodiffusion, Optical absorption, Energy gap.
G. A. M. AMIN, Characterization of Al photodoped amorphous Ge0.1As0.3Se0.6, Optoelectronics and Advanced Materials - Rapid Communications, 9, 9-10, September-October 2015, pp.1150-1154 (2015).
Submitted at: Jan. 8, 2014
Accepted at: Sept. 9, 2015
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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