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M. CALISKAN1,* , F. KURUOGLU1, M. SERİN1
In this study, electrical characterization of the Cu/PAr/CdS MIS structures were made for sensor application. The main electrical parameters of MIS structure such as the ideality factor (n), barrier height (ΦB), series resistances (Rs) and interface state density (Nss) were determined at various environments. The series resistance of structures was found 696 Ω and 818 Ω respectively at atmosphere and chloroform environments. It is observed the structure is suitable for sensor applications. Examination of gas sensing property of diode, I-V measurements were done in chloroform atmosphere and constant voltage measurements were done at different gas atmosphere. With the exposure of chloroform, the resistance of diode increases and with discontinuation of gas flow, diode was reverted back to its initial. Therefore, it was understood that the diode was suitable for the sensor applications..
Schottky junction, CdS, PAr, Gas sensor.
M. CALISKAN, F. KURUOGLU, M. SERİN, Characterization of Cu / PAr / CdS MIS structure for sensor applications, Optoelectronics and Advanced Materials - Rapid Communications, 8, 5-6, May-June 2014, pp.603-607 (2014).
Submitted at: Jan. 24, 2014
Accepted at: May 15, 2014
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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