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S. PAT1,* , M. KOKKOKOGLU1
AlN thin films deposited onto glass slides using a RF reactive sputtering system at various nitrogen concentrations. Characterizations of the deposited thin films were realized using X-ray diffraction (XRD), atomic force microscopy (AFM) and Uv-Vis spectrophotometer. Morphological and optical properties of deposited films were strongly depend on nitrogen concentration in Ar-N2 mixed gas plasma. It was shown that deposited AlN thin films were in the amorphous structure except for x=0.4 concentration. The formation of AlN (111) and AlN (220) deposited at x=0.4 concentration were confirmed by XRD studies. Optical properties of deposited AlN thin films were investigated by measuring the transmittance spectra. Transparencies of the deposited AlN films at x=0.4 and 0.3 shown highest transparency concentrations were exhibit approximately ~100% in near infrared regions. Also, refractive indexes of the deposited AlN thin films were change by nitrogen concentrations. As s result, deposited AlN thin films will be use antireflection coatings for optical components.
AlN thin Films, RF reactive sputtering, Optical properties.
S. PAT, M. KOKKOKOGLU, Characterization of deposited AlN thin films at various nitrogen concentrations by RF reactive sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 4, 6, June 2010, pp.855-858 (2010).
Submitted at: April 5, 2010
Accepted at: June 16, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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