"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Characterization of doped TiO2 thin films obtained by pulsed laser deposition

M. DOBROMIR1, A.-V. MANOLE2,* , L. URSU3, C. URSU3, M. NEAGU2, D. LUCA2

Affiliation

  1. Department of Sciences, “Alexandru Ioan Cuza” University, 11 Carol I Blvd., 700107 Iasi, Romania
  2. Faculty of Physics, “Alexandru Ioan Cuza“ University, 11 Carol I Blvd., 700506, Iasi Romania
  3. “Petru Poni” Institute of Macromolecular Chemistry, 41A Gr. Ghica Voda Alley, 700487 Iasi, Romania

Abstract

N-doped TiO2 thin films were synthesized by pulsed laser deposition using a TiO2 target in nitrogen atmosphere and glass slides substrates heated at 250°C. The samples were characterized by atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, ellipsometry and contact angle measurements. The root mean square roughness is increasing with the increase of pulses number. Even if increased surface roughness is known to intensify the hydrophilic behavior of TiO2, the samples do not present the photoinduced superhydrophilic conversion process. The optical constants values are suggesting that the PLD technique is suitable to obtain thin films for optical coatings..

Keywords

N-doped TiO2, Pulsed laser deposition, XPS, Ellipsometry, Contact angle.

Citation

M. DOBROMIR, A.-V. MANOLE, L. URSU, C. URSU, M. NEAGU, D. LUCA, Characterization of doped TiO2 thin films obtained by pulsed laser deposition, Optoelectronics and Advanced Materials - Rapid Communications, 7, 5-6, May-June 2013, pp.397-401 (2013).

Submitted at: Dec. 8, 2012

Accepted at: June 12, 2013