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R. KAPLAN1,* , B. KAPLAN1
A different method is given to measure the transparent-conductive-oxide/p-layer (TCO/p) contact and the TCO sheet resistance in a-Si:H based p-i-n superstrate solar cells under light. The method first needs having scribed TCO strips, which are electrically isolated before a-Si:H deposition, and then fabricating rows of individual devices on each strip. Analysis of 4-probe measurements in different V-sensing designs straighly gives the TCO/p contact and TCO sheet resistance. We applied this method to solar cell devices deposited on commercial SnO2 substrates. The TCO/p contact resistance is determined to be ~0.2 Ω-cm2 and the sheet resistance 2.9 Ω/sq under illumination. These values are smaller than those of dark results as compared, and thus they make a negligible contribution to the total series resistance of the solar cell devices..
Amorphous Si solar cells, J-V characterization, TCO/p contact-resistance, Sheet-resistance.
R. KAPLAN, B. KAPLAN, Characterization of TCO/p contact resistance in a-Si:H p-i-n solar cells under illumination, Optoelectronics and Advanced Materials - Rapid Communications, 8, 9-10, September-October 2014, pp.884-890 (2014).
Submitted at: Oct. 22, 2013
Accepted at: Sept. 11, 2014
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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