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HONGGANG WANG1,2,* , YU FENG1, YANHUI XIE1, JIAN LIU2, YUNSHENG QIAN2
Using the modulation transfer function obtained by establishing and solving the two-dimensional continuity equation, we have calculated and comparatively analysed the resolution characteristics of transmission-mode exponential-doping and uniform-doping GaAs photocathodes. The calculated results show that, compared with the uniform-doping GaAs photocathode, the exponential-doping structure can upgrade significantly not only the resolution but also the quantum efficiency of a negative electron affinity GaAs photocathode. This improvement differs from the method for high resolution by reducing the emission layer T e and the electron diffusion length Ld or by increasing the recombination velocity of back-interface V S , which leads to a low quantum efficiency. Moreover, the improvement of resolution and quantum efficiency for transmission-mode exponential-doping GaAs photocathode is the result of facilitating the electron transport and restraining the lateral diffusion by the built-in electric field.
GaAs photocathode, Resolution, Exponential-doping, Modulation transfer function.
HONGGANG WANG, YU FENG, YANHUI XIE, JIAN LIU, YUNSHENG QIAN, Comparative research on resolution characteristics between transmission-mode exponential-doping and uniform-doping GaAs photocathodes, Optoelectronics and Advanced Materials - Rapid Communications, 10, 11-12, November–December 2016, pp.858-863 (2016).
Submitted at: Jan. 8, 2016
Accepted at: Nov. 25, 2016
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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