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S. S. CETIN1,* , T. S. MAMMADOV1,2, S. OZCELIK1
GaAs1-xPx/GaAs alloys were grown on SI-GaAs (100) substrate by solid source molecular beam epitaxy (MBE) technique using GaP decomposition source. The critical point (CP) energies of the interband-transition edges of the structures were determined by line-shape analyses on their dielectric functions measured by spectroscopic ellipsometry (SE) at room temperature in the 0.5-5 eV photon energy regions. We obtained a new bowing parameter by analyzing effect of the phosphorous compositions on the E0 transition energy. The band gap energies of the alloys and their bowing value were also obtained by evaluating photoluminescence (PL) emission peak positions at the room temperature..
MBE, GaAsP, Spectroscopic ellipsometry, Critical points, Photoluminescence.
S. S. CETIN, T. S. MAMMADOV, S. OZCELIK, Compositional effects on the interband transition in GaAs1-xPx ternary alloys, Optoelectronics and Advanced Materials - Rapid Communications, 3, 9, September 2009, pp.910-916 (2009).
Submitted at: July 27, 2009
Accepted at: Sept. 15, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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