Abstract
Detailed analysis of near and far field intensity distribution in Gallium nitride superlattice structure has been carried out
through the general solutions of wave equation and effective index has been deduced using effective index method to
explore optical confinement and optical field. To obtain the better optical confinement in Superlattice structure, the physical
and structural parameters like thickness of wells and barriers, wavelength, Aluminum mole composition of barrier and
temperature have been optimized. The analysis of far field intensity is carried out as a function of wavelength and aluminum
mole fraction in the temperature range of 300 to 370 K. It is deduced from our analysis that the Aluminum mole fraction in
the barrier region strongly influences near field, far field divergence and the optical confinement.
Keywords
Superlattice, GaN, Nanostructures, Optical field.
Citation
K. TALELE, D. S. PATIL, Computation of optical field intensity in nitride based superlattice nanostructures for temperature range (300-370 K), Optoelectronics and Advanced Materials - Rapid Communications, 2, 7, July 2008, pp.418-423 (2008).
Submitted at: June 15, 2008
Accepted at: July 8, 2008