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Controlled in situ synthesis of Bi 2 S 3 /ZnS nano film and its photoelectrochemical and photoresponsive performances

SHUANGSHUANG HU1, WENLI QIN1,2, SIQI JIA1, PINGPING ZHANG1,* , MANQING AI1, SHIDI JIN1, YING YE1

Affiliation

  1. Department of Ocean Science,Ocean College, Z hejiang University, Zhoushan 316000, China
  2. College of Life and Environmental Science, Wenzhou University, Wenzhou 325035, China

Abstract

Novel Bi 2 S 3 and Bi 2 S 3 /ZnS thin films have been synthesized through an in situ synthesis method at room temperature. Wide ban d gap ZnS and narrow band gap Bi 2 S 3 composite to form heterojunction can show more excellent optoelectronic properties. The Bi 2 S 3 /ZnS thin films were then fabricated on FTO substrate, and this resulted in photocurrent to increase by 6 times compared to Bi 2 S 3 thin films. Especially, response time and recovery time of the photodetectors was 0.04 s and 0.09 s, respectively. The photodetectors based on both semiconductor thin films show the features of linear photocurrent characteristics and good sensitivity..

Keywords

Thin films, Bi2S3 – ZnS, Photoelectrochemistry, Photoresponse, In situ synthesis.

Citation

SHUANGSHUANG HU, WENLI QIN, SIQI JIA, PINGPING ZHANG, MANQING AI, SHIDI JIN, YING YE, Controlled in situ synthesis of Bi 2 S 3 /ZnS nano film and its photoelectrochemical and photoresponsive performances, Optoelectronics and Advanced Materials - Rapid Communications, 13, 5-6, May-June 2019, pp.368-375 (2019).

Submitted at: Dec. 21, 2018

Accepted at: June 14, 2019