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Controlling the growth of Cs3Sb2I9xClx thin films by adjusting annealing time in ambient air

FEI ZHAO1,* , YIXIN GUO2,*

Affiliation

  1. School of Photoelectric Engineering, Changzhou Institute of Technology, Changzhou, Jiangsu, 2130 3 2, China
  2. Department of Physics, Shanghai Normal University, Shanghai 200233, China

Abstract

The development of all inorganic antimony (Sb) based perovskite inspired solar cells (PISCs) has garnered significant interest owing to their superior stability and non toxic nature. Nevertheless, the fabrication of high quality all inorganic Sb based perovskite inspired thin films remains a significant obstacle. Herein, all inorganic Cs3Sb2I9xClx thin films were synthesized by adjusting the annealing time in ambient air. As the annealing time increases from 6 to 10 min, the number of holes in Cs3Sb2I9xClx thin film reduces. Simultaneously, its defect density decreases. However, with a further extension of the annealing time to 14 min, the number of holes for Cs3Sb2I9xClx thin film increases and its defect density improves. Consequently, the Cs3Sb2I9xClx thin film with annealing 10 min exhibits the best growth quality.

Keywords

Cs3Sb2I9xClx thin films Annealing time Hole Defect.

Citation

FEI ZHAO, YIXIN GUO, Controlling the growth of Cs3Sb2I9xClx thin films by adjusting annealing time in ambient air, Optoelectronics and Advanced Materials - Rapid Communications, 20, 1-2, January-February 2026, pp.69-73 (2026).

Submitted at: Oct. 11, 2025

Accepted at: Feb. 2, 2026