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Correlation between photoluminescence and ellipsometric measurements of porous silicon layers

S. RAHMOUNI1,2,* , L. ZIGHED3, S. CHAGUETMI4, M. DAOUDI5, M. KHELIFA6, M. KARYAOUI7, R. CHTOUROU7

Affiliation

  1. Department of Electrical Engineering, 20 Aout 1955 University of Skikda, Algeria
  2. Normal Higher School of Technological Education, (ENSET) Skikda, Algeria
  3. Laboratory of Chemical and Environmental Engineering,20 Aout 1955 University of Skikda, Algeria
  4. Laboratory of LSPN, 08 Mai 1945 University of Guelma, Algeria
  5. Laboratory of Energetic Research and Material Developments for nuclear Sciences, National centre of Nuclear Science and Technology, 2020 Sidi-Thabet, Tunisia
  6. Semiconductor and Advanced Technology, Laboratory of Nanostructured. Centre of Research and Energetic Technology, Techno-Park Borj-Cedria , B.P.N° 95, Hammam-Lif, 2050 Tunisia
  7. Laboratory for nanomaterials and systems for renewable energies ( LANSER), Techno-Park Borj-Cedria, B.P.N° 95, Hammam-Lif, 2050 Tunisia

Abstract

Herein, we studied the linked physical proprieties between the photoluminescence and the ellipsometric measurements of porous silicon layers. Porous silicon layers were elaborated by the electrochemical etching method, using doped 𝑝-type ⟨100⟩-oriented silicon substrate. The photoluminescence (PL) and the spectroscopic ellipsometry (SE) measurements were used to study the porous silicon layers that obtained from different etching current density and etching time. In order to apply the ellipsometry measurements, we needed to make a model of multi-layer structures that allow us to figure out the thickness and porosity of each layer. Our results showed that at some current density and some time, the porous silicon layer was etched. Additionally, we amusingly noticed a significant improvement in luminescence intensity. The study confirmed a real correlation between photoluminescence and ellipsometric measurements of porous silicon layers..

Keywords

Porous silicon, Antireflective coating, Electrochemical anodization, Photoluminescence, Spectroscopic ellipsometry.

Citation

S. RAHMOUNI, L. ZIGHED, S. CHAGUETMI, M. DAOUDI, M. KHELIFA, M. KARYAOUI, R. CHTOUROU, Correlation between photoluminescence and ellipsometric measurements of porous silicon layers, Optoelectronics and Advanced Materials - Rapid Communications, 12, 9-10, September-October 2018, pp.553-558 (2018).

Submitted at: Sept. 5, 2017

Accepted at: Oct. 10, 2018