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Cu ion substitution induced grain growth, band gap engineering and carrier recombinationengineering of all-inorganic CsPbBr3 perovskite films

FEI ZHAO1,* , WEILONG XU1, YINGJIE ZHANG1, YIXIN GUO2,* , PEIZHI YANG3, JUNHAO CHU4

Affiliation

  1. School of Photoelectric Engineering, Changzhou Institute of Technology, Changzhou, Jiangsu, 213002, China
  2. Department of Physics, Shanghai Normal University, Shanghai 200233, China
  3. Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming 650500, China
  4. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Abstract

All-inorganic CsPbBr3 perovskite films with the different degrees of Cu ion substitution were prepared by multi-step spin coating precursor solutions. Based on the results of XRD and XPS, it was confirmed that partial Pb was replaced by Cu and no impurities were generated with the increase of Cu content in the Cu-doped CsPbBr3 film. The red shift of the diffraction peak and the decrease of lattice constant in the range of 0%-3% Cu ions in this XRD spectra demonstrate the progressive substitution of Cu ions, which suggests lattice contraction. It was seen that the average grain size significantly increased to 841.94 nm with the addition of 3% Cu into CsPbBr3 films from SEM. Meanwhile, the optical band gap of the CsPbBr3 film decreases to 2.336 eV and the recombination probability of carriers of the CsPbBr3 film is lower when the Cu ion content gradually increases to 3%. However, the average grain size reduces, the optical band gap increases, and the recombination probability of carriers improves as the Cu ion content gradually increases to 6%. Therefore, the content of optimal Cu ion is 3% in this experiment. This work provides a new path for the development of all-inorganic perovskite films and devices.

Keywords

All-inorganic CsPbBr3 films, Cu-doping, Microstructure, Optical properties.

Citation

FEI ZHAO, WEILONG XU, YINGJIE ZHANG, YIXIN GUO, PEIZHI YANG, JUNHAO CHU, Cu ion substitution induced grain growth, band gap engineering and carrier recombinationengineering of all-inorganic CsPbBr3 perovskite films, Optoelectronics and Advanced Materials - Rapid Communications, 18, 1-2, January-February 2024, pp.39-45 (2024).

Submitted at: Sept. 23, 2023

Accepted at: Feb. 9, 2024