Abstract
The thin film of Lead Phthalocyanine (PbPc) on glass was prepared by Vacuum deposition method. Deposition of PbPc on pre-cleaned glass substrates under the pressure of 10-6 Torr was achieved by slowly varying the current. The rate of evaporation was properly controlled and maintained constant during all the evaporations. The thicknesses of the films were 150 nm, 300 nm and 450 nm on glass and 150 nm on KCl substrate. Current voltage conduction properties of Lead Phthalocyanine thin films have been studied. At the higher temperatures, the slope of I –V curves indicates that the thermally generated carrier density exceeds that of the injected charges. In the case, it is observed that the slope of log (J) vs log (V) curves is about unity for 300 K. The region is considered as ohmic. The plots of In (J/T2) versus 1000/ T at different voltages tend to be straight lines at higher temperatures. The straight line behaviour occurs at above 320 K. However the domination of the thermionic emission behaviour is observed at higher temperatures.
Keywords
Phthalocyanine, Richarson – schottky (RS) emission, potential barrier, MSM structure.
Citation
P. KALUGASALAM, S. GANESAN, Current voltage conduction studies of lead phthalocyanine thin film, Optoelectronics and Advanced Materials - Rapid Communications, 4, 3, March 2010, pp.345-348 (2010).
Submitted at: Jan. 12, 2010
Accepted at: March 12, 2010