Abstract
The relaxor-based xPb(In1/2Nb1/2)O3-(1-x-y)Pb(Mg1/3Nb2/3)O3-yPbTiO3 (PIN-PMN-PT) single crystals have attracted a lot of
attention over the last two decades due to their ultrahigh piezoelectric and electromechanical coupling properties. The elastic,
dielectric, and piezoelectric properties of relaxor-based single crystals should be determined before they are used to design
piezoelectric devices. Researchers can carry out simulations to evaluate the properties of piezoelectric devices after these
electromechanical properties are known. To avoid the depolarization, sometimes piezoelectric devices are driven under DC
bias field. Therefore, studying the dielectric property of PIN-PMN-PT single crystals under DC bias field is necessary to the
design of piezoelectric devices based on them. In this study, the clamped dielectric parameters π11
π and π33
π of [001]c poled
PIN-PMN-PT single crystals under DC bias field is experimentally analyzed. Moreover, it is compared with those of lead
zirconate titanate (PZT).
Keywords
Relaxor-based single crystals, PIN-PMN-PT, DC bias, Clamped dielectric property.
Citation
YIZHENG TANG, QINQIN ZHONG, HANBING GU, KAI ZHANG, DC bias field effect on clamped dielectric property of [001]c poled xPb(In1/2Nb1/2)O3-(1-x-y) Pb(Mg1/3Nb2/3)O3-yPbTiO3 single crystals, Optoelectronics and Advanced Materials - Rapid Communications, 15, 9-10, September-October 2021, pp.509-512 (2021).
Submitted at: Feb. 28, 2021
Accepted at: Oct. 7, 2021