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Deep levels in AlGaN/GaN HEMTs on silicon substrate are characterized by current deep level transient spectroscopy

H. MOSBAHI1,* , M. GASSOUMI1, C. GAQUIERE2, M. A. ZAIDI1, H. MAAREF1

Affiliation

  1. Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté´ des Sciences de Monastir, Avenue de l’environnement 5000 Monastir, Tunisia
  2. Institut d’Electronique de Microélectronique et de Nanotechnologie IEMN, Département hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille, Avenue Poincaré, 59652 Ville

Abstract

We report investigation of electron traps in AlGaN/GaN HEMTs, grown on silicon by molecular beam epitaxy. Deep levels analysis was performed by conductance deep level transient spectroscopy (CDLTS) under a drain pulse. CDLTS measurements reveal three traps with the energy levels of 0.11, 0.17 and 0.22 eV. The nature and the localization of there deep levels are discussed.

Keywords

AlGaN/GaN, HEMTs, CDLTS, Deep levels, 2DEG.

Citation

H. MOSBAHI, M. GASSOUMI, C. GAQUIERE, M. A. ZAIDI, H. MAAREF, Deep levels in AlGaN/GaN HEMTs on silicon substrate are characterized by current deep level transient spectroscopy, Optoelectronics and Advanced Materials - Rapid Communications, 4, 11, November 2010, pp.1783-1785 (2010).

Submitted at: Nov. 1, 2010

Accepted at: Nov. 10, 2010