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K. GIRIJA1,* , S. THIRUMALAIRAJAN1, S. M. MOHAN1
Semiconducting n-type cadmium indium selenide (CdInSe) thin films have been deposited on glass substrate using chemical bath technique at temperatures 313 k, 333 K and 353 K respectively, due to their tailored properties than the individual elements find potential applications in optoelectronic devices. Studies on the structural properties of the films were carried out by X-ray diffraction and scanning electron microscopy techniques revealed the cubic structure and the surface morphology. The presence of elemental constituents was confirmed using energy dispersive X-ray analysis. From the transmittance spectra it was found that the transition was direct with band gap energy ranging between 2.28 eV-1.55 eV.
Thin films, Chemical synthesis, X-ray diffraction, Optical properties.
K. GIRIJA, S. THIRUMALAIRAJAN, S. M. MOHAN, Deposition and characterization of cadmium indium selenide thin films by chemical bath technique, Optoelectronics and Advanced Materials - Rapid Communications, 3, 1, January 2009, pp.60-62 (2009).
Submitted at: Dec. 20, 2008
Accepted at: Jan. 21, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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