Abstract
This research work presents various macroscopic parameters, molecular and microscopic characteristics of organic field
effect transistor (OFET). The parameters influence charge transport processes in OFET models, field effect mobility,
disorder, trap existence, threshold voltage and current on/off ratio. The current study investigates into top contact organic
field effect transistors (OFETs) with uniform and unequal mobility zones using two-dimensional finite element-based device
models. Several calibrated simulation standards are created to imitate the morphological disorder in structure, such as
taking variable low mobility zones surrounding contacts into consideration. The effect of variation of the channel length from
20µm to 50µm and dielectrics changes in drain current, threshold voltage, current on/off ratio are studied. Furthermore, the
dielectric layer of an OFET is changed with SiO2, Al2O3, and HfO2 dielectric materials without affecting the dielectric
thickness, which improves device dependability. The device's performance is improved with high-k dielectric material. The
electrical parameters extracted for HfO2 OFET at 20µm channel length are Ion = -7.38 x 10-7
, Ioff = -3.19 x 10-14, Ion/Ioff = 2 x
107
, VTH = -0.75, SS=0.0705 and high drain current value of -1.63 x 10-5 A at gate and drain voltage of 3.0V where it showed
an improvement of 28.23% in drain current along with 51.88% improvement in current on/off ratio. Due to these improved
features, we can utilize OFET in various switching and sensing applications.
Keywords
OFET, Pentacene, Organic Semiconductor (OS), Bottom Gate Top Contact (BGTC), MOSFET, Subthreshold Slope,
High-K dielectric.
Citation
Y. THAKUR, B. RAJ, S. S. GILL, Design and performance analysis of pentacene organic field effect transistor with high-K dielectric materials, Optoelectronics and Advanced Materials - Rapid Communications, 17, 7-8, July-August 2023, pp.335-343 (2023).
Submitted at: Dec. 13, 2022
Accepted at: Aug. 7, 2023