Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
Y. THAKUR1, B. RAJ2,* , S. S. GILL1
This research work presents various macroscopic parameters, molecular and microscopic characteristics of organic field effect transistor (OFET). The parameters influence charge transport processes in OFET models, field effect mobility, disorder, trap existence, threshold voltage and current on/off ratio. The current study investigates into top contact organic field effect transistors (OFETs) with uniform and unequal mobility zones using two-dimensional finite element-based device models. Several calibrated simulation standards are created to imitate the morphological disorder in structure, such as taking variable low mobility zones surrounding contacts into consideration. The effect of variation of the channel length from 20µm to 50µm and dielectrics changes in drain current, threshold voltage, current on/off ratio are studied. Furthermore, the dielectric layer of an OFET is changed with SiO2, Al2O3, and HfO2 dielectric materials without affecting the dielectric thickness, which improves device dependability. The device's performance is improved with high-k dielectric material. The electrical parameters extracted for HfO2 OFET at 20µm channel length are Ion = -7.38 x 10-7 , Ioff = -3.19 x 10-14, Ion/Ioff = 2 x 107 , VTH = -0.75, SS=0.0705 and high drain current value of -1.63 x 10-5 A at gate and drain voltage of 3.0V where it showed an improvement of 28.23% in drain current along with 51.88% improvement in current on/off ratio. Due to these improved features, we can utilize OFET in various switching and sensing applications.
OFET, Pentacene, Organic Semiconductor (OS), Bottom Gate Top Contact (BGTC), MOSFET, Subthreshold Slope, High-K dielectric.
Y. THAKUR, B. RAJ, S. S. GILL, Design and performance analysis of pentacene organic field effect transistor with high-K dielectric materials, Optoelectronics and Advanced Materials - Rapid Communications, 17, 7-8, July-August 2023, pp.335-343 (2023).
Submitted at: Dec. 13, 2022
Accepted at: Aug. 7, 2023
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.