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G. S. KLIROS1,* , A. N. FOTIADIS1, G. P. TZIOPIS1
We report on the design of a novel silicon optical modulator based on photonic crystals with complete transverse-magnetic (TM) photonic band-gap (PBG). The device operation is based on a dynamic shift of the complete PBG due to induced change in the silicon refractive index by free carrier injection. The plane-wave expansion method (PWE) and finitedifference time-domain (FDTD) simulation were utilized to design the device and investigate its light modulation performance. With small size, rapid response time and high extinction ratio, the proposed optical modulator can be easily implemented to design ultra-compact all optical integrated circuits.
Optical modulator, Photonic crystal waveguides, Silicon photonics, Photonic band-gap.
G. S. KLIROS, A. N. FOTIADIS, G. P. TZIOPIS, Design of silicon optical modulator based on complete TM photonic band-gap, Optoelectronics and Advanced Materials - Rapid Communications, 3, 7, July 2009, pp.655-658 (2009).
Submitted at: June 11, 2009
Accepted at: July 20, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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