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LI-GUO WANG1,* , HUAI-WU ZHANG1, XIAO-LI TANG1, YUAN-QIANG SONG1
Recently, it has been demonstrated that the extended Gaussian disorder model (EGDM) can well describe the current-voltage ( J V ) characteristics of hole-only devices of PPV-based polymers. In this paper, we propose a useful numerical method adopting the uneven discretization and Newton Iteration Method to solve the coupled equations describing the space-charge limited (SCL) current in conjugated polymers. Based on this numerical method and the extended Gaussian disorder model, we calculate and analyze some electrical properties of solution-processed poly[2-methoxy-5-(2-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) in detail. We show that the boundary carrier density has an important influence on the current-voltage characteristics. Too large or too small values of the boundary carrier density will lead to incorrect current-voltage characteristics. Additionally, it is shown that the numerically calculated carrier density is a decreasing function of the distance from the interface and numerically calculated electric field is an increasing function of the distance. The maximum of carrier density and the minimum of electric field appear near the interface..
Organic semiconductors, Electrical properties, Extended Gaussian disorder model, Numerical method.
LI-GUO WANG, HUAI-WU ZHANG, XIAO-LI TANG, YUAN-QIANG SONG, Detailed calculation and analysis of electrical properties in solution-processed polymer semiconducting layers, Optoelectronics and Advanced Materials - Rapid Communications, 5, 3, March 2011, pp.263-267 (2011).
Submitted at: Aug. 17, 2010
Accepted at: March 16, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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