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VIMAL MEHTA1,2,* , R. P. CHAUHAN3, G. S. MUDAHAR2
The LR-115 detector is a commonly used SSNTD for the detection and measurement of Rn222 and its progeny through track formation. Mostly the chemical etching technique was used for the revelation of these tracks. Etching converts a latent track into a visible structure, whose information can be read under an optical microscope. So bulk attack by the etching solution is a necessary condition and the bulk etch rate of the polymeric sample is an important factor that controls track formation in SSNTDs. Normally the bulk etch rate (Vb) for the LR-115 SSNTD was calculated by measuring the removal of the thickness of the polymeric sample for different time intervals at a constant temperature. However, in this paper a novel method of % mass change of the polymeric sample was explored to know the bulk etch rate (Vb) of the sample. The suitability of the method was checked by comparing its results with the bulk etch rate measured by another method. A good correlation was found between the two methods of measurement of bulk etch rate..
SSNTD, LR-115, Chemical etching, Bulk etch rate.
VIMAL MEHTA, R. P. CHAUHAN, G. S. MUDAHAR, Determining bulk etch rate of LR-115 type II SSNTD: a novel approach, Optoelectronics and Advanced Materials - Rapid Communications, 7, 11-12, November-December 2013, pp.952-955 (2013).
Submitted at: June 20, 2013
Accepted at: Nov. 7, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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