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Dielectric, ac conductivity and electric modulus studies at MPS structure with (Cu2O-CuO)-doped PVA interfacial layer

A. BÜYÜKBAŞ-ULUŞAN1,* , S. ALTINDAL YERIŞKIN2, A. TATAROĞLU1, M. BALBASI2, Y. AZIZIAN-KALANDARAGH3,4

Affiliation

  1. Department of Physics, Faculty of Sciences, Gazi University, Ankara, Turkey
  2. Department of Chemical Engineering, Faculty of Engineering, Gazi University, Ankara, Turkey
  3. Department of Physics, Faculty of Sciences, University of Mohaghegh Ardabili, Ardabil, Iran
  4. Department of Engineering Sciences, Sabalan University of Advanced Technologies, Namin, Iran

Abstract

We have investigated the ac conductivity, complex dielectric and modulus properties of Au/(Cu2O-CuO) doped-PVA/n-Si (MPS) structure. The parameters such as dielectric constant (ε'), dielectric loss (ε''), loss tangent (tanδ), ac conductivity (σac) and complex electric modulus (M*) were obtained using admittance (capacitance and conductance) values measured in 10 kHz-5 MHz frequency range and 1 V-4 V positive voltage range. While the ε' and ε'' value increase with decrease in frequency, the σac value decreases. The values of real (M') and imaginary (M") part of complex modulus were obtained from the ε' and ε'' values. M' value increases with increasing frequency and decrease with increasing voltage. The M'' versus logf plots indicate give a peak.

Keywords

MPS structure, Complex dielectric and electric modulus, Electrical conductivity, Frequency effect.

Citation

A. BÜYÜKBAŞ-ULUŞAN, S. ALTINDAL YERIŞKIN, A. TATAROĞLU, M. BALBASI, Y. AZIZIAN-KALANDARAGH, Dielectric, ac conductivity and electric modulus studies at MPS structure with (Cu2O-CuO)-doped PVA interfacial layer, Optoelectronics and Advanced Materials - Rapid Communications, 14, 5-6, May-June 2020, pp.256-260 (2020).

Submitted at: March 30, 2019

Accepted at: June 16, 2020