Dielectric relaxation processes studies in oxygen- swift heavy ion irradiated Polyvinylidene fluoride (PVDF) thin film using TSDC measurement technique
DINESH SINGH RANA1,*
Affiliation
- Department of Instrumentation, Kurukshetra University, Kurukshetra
Abstract
Thermally stimulated depolarization current (TSDC) measurement technique have been used to investigate the dielectric relaxation processes in 75 MeV Oxygen swift heavy ion (SHI) irradiated Polyvinylidene fluoride (PVDF). The films of 20 μm thickness were irradiated with 75 MeV Oxygen-ion at different fluence: 1.0×1010 (1.0E+10), 1.0×1011 (1.0E+11), 5.63×1011 (5.63E+11), and 5.68×1012 (5.68E+12) ions/cm2. Thermally stimulated depolarization (TSD) current measurements were carried out in the temperature range 30 –165 0C at different polarization temperature (Tp) and polarization field (Ep). The heating rate (2 ºC/min) and polarization time (1 h.) have been kept constant in all TSDC measurements. TSDC characteristics of 75 MeV Oxygen-ion irradiated PVDF show a well defined current maxima (termed as β-peak) around the polarization temperature (Tp) in the temperature region 70-118 0C. The TSDC spectra of high Tp poled samples also show a current maximum around 120 0C (termed as α-peak). The β-peak is attributed to the dipolar relaxation process. The α-peak has been ascribed to the space charge polarization process due to the formation of new deep traps and in some cases notably those corresponding to low values of Ep and Tp, The number of peaks actually appearing in these spectra and their location, height and sharpness are governed by depolarization parameters (Tp, Ep). The activation energy and pre-exponential factors corresponding to β-peak and α-peak were also estimated at different polarization temperature (Tp) and polarization field (Ep)..
Keywords
PVDF, TSDC, SHI, Activation energy (U), Pre-exponential factor (τ0).
Citation
DINESH SINGH RANA, Dielectric relaxation processes studies in oxygen- swift heavy ion irradiated Polyvinylidene fluoride (PVDF) thin film using TSDC measurement technique, Optoelectronics and Advanced Materials - Rapid Communications, 6, 11-12, November-December 2012, pp.1139-1145 (2012).
Submitted at: July 15, 2012
Accepted at: Oct. 30, 2012