Direct modulation response of a 1.55 μm InGaAsP ridge waveguide laser
M. S. ÖZYAZICI1,*
Affiliation
- Bahcesehir University, Electrical and Electronics Eng. Dept., 34353 Besiktas, Istanbul, Turkey
Abstract
The high frequency direct modulation response and the -3 dB bandwidth of a 1.55 μm InGaAsP ridge waveguide laser are
investigated by using a mathematical model based on single-mode rate equations including Auger recombination,
nonradiative recombination and gain compression parameters. The effect of each laser parameter on the laser modulation
response and the -3 dB bandwidth are determined. It is found that among all parameters the gain compression and
Auger recombination are the most effective parameters affecting the direct modulation response and the -3 dB bandwidth..
Keywords
Direct modulation, Bandwidth, Ridge waveguide, Semiconductor laser.
Citation
M. S. ÖZYAZICI, Direct modulation response of a 1.55 μm InGaAsP ridge waveguide laser, Optoelectronics and Advanced Materials - Rapid Communications, 10, 9-10, September-October 2016, pp.616-618 (2016).
Submitted at: July 10, 2015
Accepted at: Sept. 29, 2016