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Direct modulation response of a 1.55 μm InGaAsP ridge waveguide laser

M. S. ÖZYAZICI1,*

Affiliation

  1. Bahcesehir University, Electrical and Electronics Eng. Dept., 34353 Besiktas, Istanbul, Turkey

Abstract

The high frequency direct modulation response and the -3 dB bandwidth of a 1.55 μm InGaAsP ridge waveguide laser are investigated by using a mathematical model based on single-mode rate equations including Auger recombination, nonradiative recombination and gain compression parameters. The effect of each laser parameter on the laser modulation response and the -3 dB bandwidth are determined. It is found that among all parameters the gain compression and Auger recombination are the most effective parameters affecting the direct modulation response and the -3 dB bandwidth..

Keywords

Direct modulation, Bandwidth, Ridge waveguide, Semiconductor laser.

Citation

M. S. ÖZYAZICI, Direct modulation response of a 1.55 μm InGaAsP ridge waveguide laser, Optoelectronics and Advanced Materials - Rapid Communications, 10, 9-10, September-October 2016, pp.616-618 (2016).

Submitted at: July 10, 2015

Accepted at: Sept. 29, 2016