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P. DALAPATI1, N. B. MANIK1,* , A. N. BASU1
In the present work we have measured the forward bias current-voltage (I-V) characteristics of AlGaInP based heterostructures red light emitting diode over a wide temperature range from 350 K to 77 K. The forward I-V characteristics show two distinctive regions below and above roughly 1.75 Volt marked by two different slopes, virtually insensitive to variation of temperature, which seems to suggest that the carrier transport process has complex character and there exist various tunneling mechanisms. The semilog plot of I-V curves exhibit two distinct, low and medium bias regions and the corresponding characteristic energies seem to suggest that there exist probable carriers which are electron and heavy hole respectively that undergoes change with bias voltage. This insight together with the data generated in the investigation will be helpful for device application..
AlGaInP-LEDs, High and low temperature capabilities, Ideality factor, Tunneling, Characteristic energy.
P. DALAPATI, N. B. MANIK, A. N. BASU, Dominance of forward tunneling current in AlGaInP based heterostructures red light emitting diode, Optoelectronics and Advanced Materials - Rapid Communications, 10, 1-2, January-February 2016, pp.12-15 (2016).
Submitted at: Aug. 24, 2013
Accepted at: Feb. 10, 2016
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
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