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Effect of back-interface recombination velocity on surface photovoltage for GaAs photocathodes

LIANG CHEN1,2,* , YUNSHENG QIAN2, XINLONG CHEN2, RUI YANG2, SHUQIN ZHANG3

Affiliation

  1. Institute of Optoelectronics Technology, Chinailiang University, 310018, Hangzhou, China
  2. Institute of Electronic Engineering & Optoelectronics Technology, Nanjing University of Science and Technology, 210094, Nanjing, China
  3. Institute of Optoelectronics Technology, Chin Jiliang University, 310018, Hangzhou, China

Abstract

Varied doping structures of GaAs photocathodes have been proved to enhance quantum efficiency than uniform doping structure. As the value of active electrons is not only in close connection with the electron diffusion length, active layer thickness but also in connection with the back-interface recombination velocity. In consider of the back-interface recombination velocity, we deduced the modified equations of surface photovoltage for exponential doping structure and uniform doping structure. Through emulations, the exponential doping structure can reduce the decreasing trend of surface photovoltage than uniform doping structure along the back-interface recombination velocity growing. Through experiments and analysis, the influences of internal electric field for two structures were well discussed. This investigation can help to well study the varied doping structures and optimize the structure designs for GaAs photocathodes in the future..

Keywords

GaAs photocathode, Surface photovoltage, Back-interface recombination velocity, Varied doping.

Citation

LIANG CHEN, YUNSHENG QIAN, XINLONG CHEN, RUI YANG, SHUQIN ZHANG, Effect of back-interface recombination velocity on surface photovoltage for GaAs photocathodes, Optoelectronics and Advanced Materials - Rapid Communications, 5, 12, December 2011, pp.1268-1271 (2011).

Submitted at: Nov. 2, 2011

Accepted at: Nov. 24, 2011