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WEIYING ZHANG1,2, ZHENZHONG LIU1, YUNXIA HAN1, ZHUXI FUb2,*
N-ZnO:Al(ZAO)/P-Si heterojunctions were prepared by direct current reactive sputtering. Al dopant concentrations of ZnO films were altered by varying the sputtering targets. The crystal structure, electrical property and photovoltaic effect were examined by XRD, Hall effect measurement, open circuit voltage and short circuit current. The results demonstrated that all the samples had a strong preferred c-axis orientation, and the crystal quality was destroyed with the increasing of Al concentration. The Hall effect measurement shows that the carrier concentration increased with the addition of Al dopant. It was worth emphasizing that the photovoltaic effect was improved obviously by increasing Al concentration. In order to further investigate the mechanism of the influence of Al contents, the response spectra of these samples were analyzed in detail.
Photovoltaic property, ZnO/Si, Al concentration.
WEIYING ZHANG, ZHENZHONG LIU, YUNXIA HAN, ZHUXI FUb, Effect of doping concentration on photovoltaic property of ZnO:Al/Si heterojunction, Optoelectronics and Advanced Materials - Rapid Communications, 4, 5, May 2010, pp.681-684 (2010).
Submitted at: March 1, 2010
Accepted at: May 20, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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