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S. SINGH1,* , D. ROBIDAS1, N. ROHILA1, S. PAL1, C. DHANAVANTRI1
Light emitting diodes (LEDs) based on GaN/InGaN material suffer from efficiency droop at high current injection levels. We investigate the effect of Electron Blocking Layer (EBL) on Internal Quantum Efficiency (IQE) in multiple quantum well (MQW) GaN/InGaN LEDs to reduce the efficiency droop. The simulation results reflect a significant improvement in the efficiency droop for the structure without any EBL..
Light-emitting diodes (LEDs), Multi quantum well (MQW), Efficiency droop, Electron blocking layer (EBL).
S. SINGH, D. ROBIDAS, N. ROHILA, S. PAL, C. DHANAVANTRI, Effect of electron blocking layer on efficiency droop in blue InGaN/GaN based light-emitting diodes, Optoelectronics and Advanced Materials - Rapid Communications, 4, 8, August 2010, pp.1106-1110 (2010).
Submitted at: July 22, 2010
Accepted at: Aug. 12, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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