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Effect of electron lateral diffusion in the reflection-mode exponential-doping GaAlAs photocathode on resolution

HONGGANG WANG1,* , LILI WANG1, JINGUANG HAO1, JIAN LIU2, YAOZHANG SAI1, YANG CAO2

Affiliation

  1. School of Information and Electrical Engineering, Ludong University, 264025, Yantai, China
  2. School of Electronic and Optical Engineering, Nanjing University of Science and Technology, 210094, Nanjing, China

Abstract

Resolution of a reflection-mode GaAlAs photocathode which is efficiently characterized by modulation transfer function (MTF) is primarily governed by electron lateral diffusion in this photocathode. As several crucial parameters for the GaAlAs photocathode, the length of electron diffusion LD, the thickness of emission layer Te, the coefficient of optical absorption α, and the recombination velocity at back-interface SV has a significant effect on the degree of lateral diffusion. To obtain a high resolution, by establishing an appropriate model of MTF for reflection-mode exponential-doping GaAlAs photocathode, the effect of LD, Te, α, and SV on corresponding MTF and quantum efficiency for exponential-doping and uniform-doping Ga0.37Al0.63As photocathodes has been researched in detail. And then we have discussed the dependence of electron lateral diffusion on LD, Te, α, and SV. The calculated results demonstrate that the reflection-mode exponential-doping Ga0.37Al0.63As photocathode has a great potentiality in achieving high resolution and high quantum efficiency, compared with its counterpart employed uniform-doping structure. It is mainly because that electron lateral diffusion in this photocathode is bound by electric field which is formed by exponential-doping structure. In practice, for a given reflection-mode exponential-doping Ga0.37Al0.63As photocathode, a compromise between high resolution and high quantum efficiency must be made.

Keywords

Electron lateral diffusion, Reflection-mode, Exponential-doping, GaAlAs photocathode, Modulation transfer function.

Citation

HONGGANG WANG, LILI WANG, JINGUANG HAO, JIAN LIU, YAOZHANG SAI, YANG CAO, Effect of electron lateral diffusion in the reflection-mode exponential-doping GaAlAs photocathode on resolution, Optoelectronics and Advanced Materials - Rapid Communications, 17, 11-12, November-December 2023, pp.512-518 (2023).

Submitted at: Sept. 11, 2023

Accepted at: Dec. 4, 2023