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Effect of indium incorporation on the optical properties of Ge-Se glassy semiconductors

RAKESH KUMAR1,* , DEEPSHIKHA SHARMA1, V. S. RANGRA2

Affiliation

  1. Department of Science and Technology, Singhania University, Rajasthan, India
  2. Department of Physics and Electronics, Himachal Pradesh University Shimla-5

Abstract

Optical properties viz. refractive index ( n ), extinction coefficient ( k ) has been studied by analyzing the transmission spectrum of thin films of Ge17Se83-xInx (x = 0, 3, 6, 9, 12, 15). The spectrum was obtained in the range 400 – 1500 nm. Tauc’s extrapolation has been used to determine optical band gap of thin films. The variation in the optical parameters for different thin films are explained on the basis of presence of defect states and change in average bond energy of the system. The real and imaginary parts of dielectric constants and optical conductivity of the thin films has also been calculated..

Keywords

Ge-Se, Glassy semiconductors, Indium doping optical properties.

Citation

RAKESH KUMAR, DEEPSHIKHA SHARMA, V. S. RANGRA, Effect of indium incorporation on the optical properties of Ge-Se glassy semiconductors, Optoelectronics and Advanced Materials - Rapid Communications, 5, 10, October 2011, pp.1065-1068 (2011).

Submitted at: Aug. 26, 2011

Accepted at: Oct. 20, 2011