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E. KOÇ1, H. Y. KURT1,* , B. G. SALAMOV1,2
In this paper we experimentally discuss the nitrogen and air plasma effect on the transport properties of semi-insulating (SI) GaAs photocathode in the semiconductor gas discharge structure. Discharge gap is filled with various pressures of air and nitrogen at different gap spacing d and cathode diameter D. Under the same discharge conditions, while the N-type CVC behaviors and low frequency oscillations in air are observed at the lower pressures, that behavior in nitrogen gas is generally encountered between p = 100 and 480 Torr. Besides, threshold electrical field Eth value at d = 525 µm is found to 9.4 kV/cm in the N2-filled case. This value is higher than that in the air-filled case observed at d = 525 µm. Our results also provide important knowledge associated with plasma–surface interaction with low-energy nitrogen ions on the presence of an oxide or disturbed layer is encountered at the interface between the photocathode and the gas discharge plasma..
Semi-insulating GaAs, Nitrogen plasma, plasma-surface interaction, Current instability, N-type NDR.
E. KOÇ, H. Y. KURT, B. G. SALAMOV, Effect of nitrogen plasma on the transport properties of SI GaAs photocathode, Optoelectronics and Advanced Materials - Rapid Communications, 5, 9, September 2011, pp.988-993 (2011).
Submitted at: June 27, 2011
Accepted at: Sept. 15, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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