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Effect of polishing powder on laser damage threshold of fused silica

LIU HONGJIE1,* , HUANG JIN1, SUN LAIXI1, LI QINGZHI1, YE XIN1, WANG FENGRUI1, GENG FENG1, JIANG XIAODONG1, WU WEIDONG1,2,* , ZHENG WANGUO1,2

Affiliation

  1. Research Center of Laser Fusion, China Academ y of Engineering Physics, Mianyang 621900, China
  2. IFSA Coll aborative Innovation Center, Shanghai Jiao Tong University , Shanghai 200240, China

Abstract

Highly absorptive contaminants, which are introduced by polishing and buried under the optics surface, are responsible for igniting laser damage of fused silica. In order to study effects of contamination on laser induced damage, we processed fused silica samples by using different polishing powder. We analyzed the type and relative contents of impurities on fused silica surface and tested laser damage threshold with 355nm laser irradiation. The results show that laser induced damage of the samples has obvious difference. The samples polished by Fe2O3 and CeO2 have relative lower damage threshold, and the samples po lished by SiO2 and ZrO2 have relative higher damage threshold. Microscopy images of damage morphology show that there are dense damage sites of sub micrometer size around damage crater on the samples polished by Fe2O3 and CeO2. Sub micrometer site can not be observed by online microscopy and be regarded as damage. However, no similar damage sites of sub micrometer size exist on other samples. This suggests that sub micrometer damage sites have a relation with damage crater. This paper has an important signi ficance to improve process technique of fused silica optics..

Keywords

Fused silica; Laser induced damage; Contamination; Polishing powder.

Citation

LIU HONGJIE, HUANG JIN, SUN LAIXI, LI QINGZHI, YE XIN, WANG FENGRUI, GENG FENG, JIANG XIAODONG, WU WEIDONG, ZHENG WANGUO, Effect of polishing powder on laser damage threshold of fused silica, Optoelectronics and Advanced Materials - Rapid Communications, 9, 9-10, September-October 2015, pp.1114-1118 (2015).

Submitted at: Aug. 20, 2015

Accepted at: Sept. 9, 2015