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Effect of reactor pressure upon photoluminescence properties of ZnTe homoepitaxial layer

SHULAI HUANG1,2, ZIWU JI1,* , LEI ZHANG1, MINGSHENG XU3, SHUANG QU3, XIANGANG XU3, QIXIN GUO4

Affiliation

  1. School of Physics, Shandong University, Jinan 250100, China
  2. Sience and Information College, Qingdao Agricultural University, Qingdao 266109, China
  3. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  4. Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan

Abstract

ZnTe homoepitaxial layers on (100) oriented ZnTe substrates were fabricated at different reactor pressures and their photoluminescence (PL) spectra and X ray rocking curve (XRC) were measured. The measurement results show that reducing reactor pressure leads to the enhancement of the free excitonic emissions relative to the impurity related emissions and the decrease of XRC linewidth. This indicates that both the PL property and the crystallinity for the ZnTe epilayer are significantly improved with reducing reactor pressure during growth..

Keywords

ZnTe, homoepitaxial layer, Low pressure MOVPE, Photoluminescence, X-ray rocking curve.

Citation

SHULAI HUANG, ZIWU JI, LEI ZHANG, MINGSHENG XU, SHUANG QU, XIANGANG XU, QIXIN GUO, Effect of reactor pressure upon photoluminescence properties of ZnTe homoepitaxial layer, Optoelectronics and Advanced Materials - Rapid Communications, 7, 9-10, September-October 2013, pp.730-733 (2013).

Submitted at: May 2, 2013

Accepted at: Sept. 18, 2013