Abstract
Mo thin films were deposited on
glass and silicon substrate s using DC magnetron sputtering at different s puttering time
respectively . Their morphological, structural and electrical p ropert ies were investigated. The result s show that Mo films
present crystal plane orientation a long ( direction . And the grain size s increas e w ith the increas e of sputtering t ime . In
addition, the sheet resistance and resistivity of Mo films show a first decreas e and then increas e relationship with the
increas e of sputtering time . Particularly, when the sputtering time is 2 5 min, the resistivit y of Mo film deposited on glass is
lowest in this experiment, 12.33 µΩ•cm..
Keywords
Mo thin films, S puttering time, Substrates, Properties.
Citation
TING TING LIANG, AI QIN WANG, HAI LI ZHAO, JING PEI XIE, Effect of sputtering time on Mo thin films deposited on different substrates using DC magnetron sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 11, 9-10, September-October 2017, pp.574-579 (2017).
Submitted at: Dec. 5, 2016
Accepted at: Oct. 10, 2017