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Effect of sputtering time on Mo thin films deposited on different substrates using DC magnetron sputtering

TING TING LIANG1, AI QIN WANG1,* , HAI LI ZHAO2, JING PEI XIE3

Affiliation

  1. Henan U niversity of S cience and T echnology, Luoyang, Henan province, 471023, China
  2. Zhengzhou U niversity, Zhengzhou, Henan province, 450000, China
  3. Collaborative Innovation Center of Nonferrous Metals , Henan province, 471000, China

Abstract

Mo thin films were deposited on glass and silicon substrate s using DC magnetron sputtering at different s puttering time respectively . Their morphological, structural and electrical p ropert ies were investigated. The result s show that Mo films present crystal plane orientation a long ( direction . And the grain size s increas e w ith the increas e of sputtering t ime . In addition, the sheet resistance and resistivity of Mo films show a first decreas e and then increas e relationship with the increas e of sputtering time . Particularly, when the sputtering time is 2 5 min, the resistivit y of Mo film deposited on glass is lowest in this experiment, 12.33 µΩ•cm..

Keywords

Mo thin films, S puttering time, Substrates, Properties.

Citation

TING TING LIANG, AI QIN WANG, HAI LI ZHAO, JING PEI XIE, Effect of sputtering time on Mo thin films deposited on different substrates using DC magnetron sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 11, 9-10, September-October 2017, pp.574-579 (2017).

Submitted at: Dec. 5, 2016

Accepted at: Oct. 10, 2017